UTILISATION DES PARTICULES CHARGEES EN ANALYSE DE COUCHES SUPERFICIELLES. RETRODIFFUSION D'IONSHIRAKI A.1976; RADIOISOTOPES; JAP.; DA. 1976; VOL. 25; NO 9; PP. 571-581; BIBL. 7 REF.Article

LOW TEMPERATURE REACTIONS AT SI-METAL CONTACTS: FROM SIO₂ GROWTH DUE TO SI-AU REACTION TO THE MECHANISM OF SILICIDE FORMATION = REACTIONS A BASSE TEMPERATURE AUX CONTACTS METAL-SI: DE LA CROISSANCE DE SIO₂ DUE A LA REACTION SI-AU AU MECANISME DE FORMATION DU SILICIUREHIRAKI A.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 4; PP. 549-562; BIBL. 42 REF.Article

A circuit chasing technique in a distance-regular graph with trianglesHIRAKI, A.European journal of combinatorics. 1993, Vol 14, Num 5, pp 413-420, issn 0195-6698Article

K EMISSION SPECTRA OF NON TRANSITION ELEMENTS DISSOLVED IN NOBLE OR TRANSITION METALS = SPECTRES D'EMISSION K DES ELEMENTS NON DE TRANSITION DISSOUS DANS LES METAUX DE NOBLE OU DE TRANSITIONTANAKA K; HIRAKI A.1978; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1978; VOL. 17; SUPPL. 2; PP. 121-124; BIBL. 9 REF.Conference Paper

Low temperature reactions at Si/metal interfaces; what is going on at the interfaces = Réactions à basse température aux interfaces Si/métal; qu'est-ce qui se passe aux interfacesHIRAKI, A.Surface science reports. 1983, Vol 3, Num 7, pp 357-412, issn 0167-5729Serial Issue

LOW TEMPERATURE DIFFUSION OF AU INTO SI IN THE SI (SUBSTRATE)-AU (FILM) SYSTEM.NAKASHIMA K; IWAMI M; HIRAKI A et al.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 25; NO 2; PP. 423-430; BIBL. 12 REF.Article

ELECTRONIC ENERGY STATES OF TUNGSTEN DICHALCOGENIDES BY LOW ENERGY ELECTRON LOSS SPECTROSCOPY STUDIESITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 1; PP. 106-113; BIBL. 24 REF.Article

INITIAL STAGE OF ROOM-TEMPERATURE METAL-SILICIDE FORMATION STUDIED BY HIGH-ENERGY HE⁺-ION SCATTERING = STADE INITIAL DE LA FORMATION DE SILICIURE METALLIQUE A TEMPERATURE AMBIANTE ETUDIEE PAR DIFFUSION D'IONS HE⁺ DE HAUTE ENERGIENARUSAWA T; GIBSON WM; HIRAKI A et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 8; PP. 4835-4838; BIBL. 19 REF.Article

A QUANTITATIVE ANALYSIS OF ELECTRON ENERGY LOSS SPECTRA OF KEV ELECTRONS FROM THIN-FILM-SUBSTRATE SYSTEMITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 8; PP. 2704-2712; BIBL. 24 REF.Article

FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATESHIRAKI A; LUGUJJO E; MAYER JW et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3643-3649; BIBL. 13 REF.Serial Issue

ELECTRONIC ENERGY STATES OF HFSE₂ AND NBSE₂ BY LOW ENERGY ELECTRON LOSS SPECTROSCOPY STUDYITO T; IWAMI M; HIRAKI A et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 6; PP. 1978-1985; BIBL. 28 REF.Article

METALLIC STATE OF SI IN SI-NOBLE METAL SYSTEMS.IWAMI M; SHIMIZU A; HIRAKI A et al.1976; TECHNOL. REP. OSAKA UNIV.; JAP.; DA. 1976; VOL. 26; NO 1293; PP. 191-199; BIBL. 18 REF.Article

INFLUENCE OF FUEL OIL COMPONENTS ON NO EMISSIONOGURA T; WATANABE M; HIRAKI A et al.1978; J. FUEL SOC. JAP.; JPN; DA. 1978; VOL. 57; NO 9; PP. 758-764; ABS. ENG; BIBL. 14 REF.Article

Stuffing of noble metals into anodized porous silicon by direct evaporation = Colmatage du silicium poreux anodisé par des métaux nobles lors de l'évaporation directeITO, T; HIRAKI, A.Japanese journal of applied physics. 1987, Vol 26, Num 8, pp 1219-1223, issn 0021-4922, 1Article

ELECTRONIC STATES OF NI-SILICIDES AND ITS RELATION TO METAL-SILICILIDE/SI INTERFACESIWAMI M; OKUNO K; KAMEI S et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1542-1545; BIBL. 19 REF.Article

APPLICATION OF AUGER ELECTRON SPECTROSCOPY TO THE STUDY OF METAL-SEMICONDUCTOR INTERFACIAL REACTIONSUCHOL KIM; KAMMURA W; IWAMI M et al.1980; TECHNOL. REP. OSAKA UNIV.; ISSN 0030-6177; JPN; DA. 1980; VOL. 30; NO 1517-1550; PP. 81-87; BIBL. 14 REF.Article

SI (LMM) AUGER ELECTRON EMISSION FROM SI ALLOYS BY THE KEV AR⁺ ION BOMBARDMENT, NEW EFFECT AND APPLICATIONHIRAKI A; SU CHOL KIM; IMURA T et al.1979; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1979; VOL. 18; NO 9; PP. 1767-1772; BIBL. 17 REF.Article

METALLIC STATE OF SI IN SI-NOBLE-METAL VAPOR-QUENCHED ALLOYS STUDIED BY AUGER ELECTRON SPECTROSCOPY. = ETAT METALLIQUE DE SI DANS DES ALLIAGES TREMPES VAPOR EN METAL NOBLE - SI ETUDIES PAR SPECTROSCOPIE ELECTRONIQUE AUGERHIRAKI A; SHIMIZU A; IWAMI M et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 2; PP. 57-60; BIBL. 13 REF.Article

ELECTRON SPIN RESONANCE IN THE AMORPHOUS SI-AU SYSTEM.KISHIMOTO N; MORIGAKI K; MURAKAMI K et al.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 80; NO 2; PP. K113-K115; BIBL. 4 REF.Article

ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS.HIRAKI A; SHUTO K; KIM S et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 9; PP. 611-612; BIBL. 4 REF.Article

Aging phenomena of light emitting porous siliconITO, T; HIRAKI, A.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 331-339, issn 0022-2313Article

Detailed study of Si-H stretching modes in μc-Si: H film through second derivative IR spectraSATOH, T; HIRAKI, A.Japanese journal of applied physics. 1985, Vol 24, Num 7, pp L491-L494, issn 0021-4922Article

CHARACTERIZATION OF HYDROGENATED AMORPHOUS SILICON: SOME BEHAVIORS OF HYDROGEN AND IMPURITIES STUDIED BY FILM CHARACTERIZATION TECHNIQUESIMURA T; KUBOTA K; USHITA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 99-103; BIBL. 9 REF.Conference Paper

PRESENCE OF CRITICAL AU-FILM THICKNESS FOR ROOM TEMPERATURE INTERFACIAL REACTION BETWEEN AU (FILM) AND SI (CRYSTAL SUBSTRATE)OKUNO K; ITO T; IWAMI M et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 6; PP. 493-497; BIBL. 16 REF.Article

CHEMICAL EFFECT IN (LVV) AUGER SPECTRA OF THIRD-PERIOD ELEMENTS (AL, SI, P, AND S) DISSOLVED IN COPPERHIRAKI A; KIM S; KAMMURA W et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 194-195; BIBL. 7 REF.Article